Question 163: Semiconductors and Logic Gates

Question

The V-I characteristic of a diode is shown in the figure. The ratio of forward to reverse bias 
 resistance is :
![](https://app-content.cdn.examgoal.net/fly/@width/image/1l83o5fbv/111bc4a6-8338-4740-b1ac-1ef79cf2f85d/24ecaab0-354c-11ed-8c5c-f3f0850e6b94/file-1l83o5fbw.png?format=png)

Accepted Answer

Forward bias resistance
R
1
= ${{\Delta V} \over {\Delta I}}$ = ${{0.8 - 0.7} \over {\left( {20 - 10} ight) 	imes {{10}^{ - 3}}}}$ = 10 $\Omega $
Reverse bias resistance,
R
2
= ${{10} \over {1 	imes {{10}^{ - 6}}}}$ = 10
7
$\Omega $
$	herefore\,\,\,$ Ratio of resistance
=  ${{{R_1}} \over {{R_2}}}$ = ${{10} \over {{{10}^7}}}$ = 10
$-$6

Answer

10

Answer

10
$-$6

Answer

10
6

Answer

100

Semiconductors and Logic Gates

The V-I characteristic of a diode is shown in the figure. The ratio of forward to reverse bias resistance is :

Choose the correct answer: