Question 96: Semiconductors and Logic Gates

Question

The I-V characteristics of a p-n junction diode in forward bias is shown in the figure. The ratio of dynamic resistance, corresponding to forward bias voltage of 2 V and  4 V respectively, is :
![](https://app-content.cdn.examgoal.net/fly/@width/image/1l5bpgzh0/aedb5fa8-7186-4830-a61f-e7aa2aa3eed0/ee929540-fe52-11ec-b169-b5046c590266/file-1l5bpgzh1.png?format=png)

Accepted Answer

$	herefore$ $R = {{\Delta v} \over {\Delta i}}$
Now, dynamic resistance at $V = 2V$ is
${R_2} = {{0.1} \over {5 	imes {{10}^{ - 3}}}}\,\Omega $
= 20 $\Omega$
Similarly,
${R_4} = {{0.2} \over {50 	imes {{10}^{ - 3}}}} = 4\,\Omega $
${{{R_2}} \over {{R_4}}} = {5 \over 1}$

Answer

1 : 2

Answer

5 : 1

Answer

1 : 40

Answer

20 : 1

Semiconductors and Logic Gates

The I-V characteristics of a p-n junction diode in forward bias is shown in the figure. The ratio of dynamic resistance, corresponding to forward bias voltage of 2 V and 4 V respectively, is :

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