Question 205: Semiconductors and Logic Gates

Question

From the given transfer characteristic of a transistor in $$\mathrm{CE}$$ configuration, the value of power gain of this configuration is $$10^{x}$$, for $$\mathrm{R}_{\mathrm{B}}=10 ~\mathrm{k} \Omega$$, and $$\mathrm{R}_{\mathrm{C}}=1 ~\mathrm{k} \Omega$$. The value of $$x$$ is __________.

Accepted Answer

Power gain
$$
\begin{aligned}
& \Rightarrow \mathrm{A}_{\mathrm{v}} \cdot \mathrm{A}_1=\mathrm{B} \frac{\mathrm{R}_{\mathrm{C}}}{\mathrm{R}_{\mathrm{B}}} \cdot \mathrm{B}=\mathrm{B}^2 \frac{\mathrm{R}_{\mathrm{C}}}{\mathrm{R}_{\mathrm{B}}} \\
& =\left(\frac{(20-10) 	imes 10^{-3}}{(200-100) 	imes 10^{-6}}ight) 	imes \frac{1 	imes 10^3}{10 	imes 10^3}=10^3
\end{aligned}
$$
Hence $\mathrm{x}=3$

Semiconductors and Logic Gates

From the given transfer characteristic of a transistor in $\mathrm{CE} configuration, the value of power gain of this configuration is 10^{x}, for \mathrm{R}_{\mathrm{B}}=10 ~\mathrm{k} \Omega, and \mathrm{R}_{\mathrm{C}}=1 ~\mathrm{k} \Omega. The value of x$ is __________.

Choose the correct answer: